Drain to Source Voltage;60V/Gate Charge(Qg);9.5nC@10V/Type;N-Channel/Pd - Power Dissipation;25W/RDS(on);100mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);11A/Gate Threshold Voltage (Vgs(th));2.5V60V 100mΩ@4.5V 25W Single FETs,... Read more

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