Taiwan Semiconductor-Single FETs, MOSFETs-TSM900N06CP

Description

Drain to Source Voltage;60V/Gate Charge(Qg);9.5nC@10V/Type;N-Channel/Pd - Power Dissipation;25W/RDS(on);100mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);27pF/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;553.4pF/Output Capacitance(Coss);34.4pF


60V 100mΩ@4.5V 25W TO-252(DPAK) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);9.5nC@10V/Type;N-Channel/Pd - Power Dissipation;25W/RDS(on);100mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);27pF/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;553.4pF/Output Capacitance(Coss);34.4pF60V 100mΩ@4.5V 25W... Read more

$3.96 Excl. VAT

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);9.5nC@10V/Type;N-Channel/Pd - Power Dissipation;25W/RDS(on);100mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);27pF/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;553.4pF/Output Capacitance(Coss);34.4pF


    60V 100mΩ@4.5V 25W TO-252(DPAK) Single FETs, MOSFETs RoHS

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