Taiwan Semiconductor-Single FETs, MOSFETs-TSM900N06CW RPG

Description

Drain to Source Voltage;60V/Gate Charge(Qg);9.3nC@10V/Number;1 N-channel/RDS(on);90mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);11A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;500pF


60V 90mΩ@10V 1 N-channel SOT-223 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);9.3nC@10V/Number;1 N-channel/RDS(on);90mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);11A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;500pF60V 90mΩ@10V 1 N-channel SOT-223 Single... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);9.3nC@10V/Number;1 N-channel/RDS(on);90mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);11A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;500pF


    60V 90mΩ@10V 1 N-channel SOT-223 Single FETs, MOSFETs RoHS

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