Taiwan Semiconductor-Single FETs, MOSFETs-TSM900N10CH X0G

Description

Drain to Source Voltage;100V/Gate Charge(Qg);9.3nC@10V/Number;1 N-channel/Pd - Power Dissipation;50W/RDS(on);100mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);35pF/Current - Continuous Drain(Id);15A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.48nF


100V 100mΩ@4.5V 1 N-channel 50W TO-251(IPAK) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);9.3nC@10V/Number;1 N-channel/Pd - Power Dissipation;50W/RDS(on);100mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);35pF/Current - Continuous Drain(Id);15A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);9.3nC@10V/Number;1 N-channel/Pd - Power Dissipation;50W/RDS(on);100mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);35pF/Current - Continuous Drain(Id);15A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.48nF


    100V 100mΩ@4.5V 1 N-channel 50W TO-251(IPAK) Single FETs, MOSFETs RoHS

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