Taiwan Semiconductor-Single FETs, MOSFETs-TSM900N10CP

Description

Drain to Source Voltage;100V/Gate Charge(Qg);9.3nC@10V/Type;N-Channel/Pd - Power Dissipation;50W/RDS(on);100mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);15A/Gate Threshold Voltage (Vgs(th));2.5V


100V 100mΩ@4.5V 50W TO-252(DPAK) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);9.3nC@10V/Type;N-Channel/Pd - Power Dissipation;50W/RDS(on);100mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);15A/Gate Threshold Voltage (Vgs(th));2.5V100V 100mΩ@4.5V 50W TO-252(DPAK) Single... Read more

$5.55 Excl. VAT

    • Guaranteed secure & safe checkout.

      shop pay

    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);9.3nC@10V/Type;N-Channel/Pd - Power Dissipation;50W/RDS(on);100mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);15A/Gate Threshold Voltage (Vgs(th));2.5V


    100V 100mΩ@4.5V 50W TO-252(DPAK) Single FETs, MOSFETs RoHS

    Recently viewed products

      Login

      Forgot your password?

      Don't have an account yet?
      Create account