Taiwan Semiconductor-Single FETs, MOSFETs-TSM950N10CW

Description

Drain to Source Voltage;100V/Gate Charge(Qg);9.3nC@10V/Type;N-Channel/Pd - Power Dissipation;9W/RDS(on);110mΩ@4.5V/Current - Continuous Drain(Id);6.5A/Gate Threshold Voltage (Vgs(th));2.5V


100V 110mΩ@4.5V 9W SOT-223 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);9.3nC@10V/Type;N-Channel/Pd - Power Dissipation;9W/RDS(on);110mΩ@4.5V/Current - Continuous Drain(Id);6.5A/Gate Threshold Voltage (Vgs(th));2.5V100V 110mΩ@4.5V 9W SOT-223 Single FETs, MOSFETs... Read more

$4.71 Excl. VAT

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);9.3nC@10V/Type;N-Channel/Pd - Power Dissipation;9W/RDS(on);110mΩ@4.5V/Current - Continuous Drain(Id);6.5A/Gate Threshold Voltage (Vgs(th));2.5V


    100V 110mΩ@4.5V 9W SOT-223 Single FETs, MOSFETs RoHS

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