TECH PUBLIC-Single FETs, MOSFETs-2SJ356-TP

Description

Drain to Source Voltage;60V/Gate Charge(Qg);11.8nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;1.6W/RDS(on);88mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);50pF/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;1.06nF/Output Capacitance(Coss);71pF


60V 88mΩ@10V 1 P-Channel 1.6W SOT-89-3 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);11.8nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;1.6W/RDS(on);88mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);50pF/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);11.8nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;1.6W/RDS(on);88mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);50pF/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;1.06nF/Output Capacitance(Coss);71pF


    60V 88mΩ@10V 1 P-Channel 1.6W SOT-89-3 Single FETs, MOSFETs RoHS

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