TECH PUBLIC-Single FETs, MOSFETs-FDG6308P-P

Description

Drain to Source Voltage;20V/Gate Charge(Qg);500pC@4.5V/Number;2 P-Channel/Type;P-Channel/Pd - Power Dissipation;280mW/RDS(on);1.05Ω@1.8V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);4.5pF/Current - Continuous Drain(Id);1.1A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;55pF/Output Capacitance(Coss);6pF


N-Channel Array 20V 1.1A 280mW Surface Mount SOT-363

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);500pC@4.5V/Number;2 P-Channel/Type;P-Channel/Pd - Power Dissipation;280mW/RDS(on);1.05Ω@1.8V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);4.5pF/Current - Continuous Drain(Id);1.1A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);500pC@4.5V/Number;2 P-Channel/Type;P-Channel/Pd - Power Dissipation;280mW/RDS(on);1.05Ω@1.8V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);4.5pF/Current - Continuous Drain(Id);1.1A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;55pF/Output Capacitance(Coss);6pF


    N-Channel Array 20V 1.1A 280mW Surface Mount SOT-363

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