TECH PUBLIC-Single FETs, MOSFETs-NDT2955

Description

Drain to Source Voltage;60V/Gate Charge(Qg);6.2nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;2.2W/RDS(on);95mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);32pF/Current - Continuous Drain(Id);3A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;637pF/Output Capacitance(Coss);39pF


60V 3A 2.2W Surface Mount SOT-223

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);6.2nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;2.2W/RDS(on);95mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);32pF/Current - Continuous Drain(Id);3A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);6.2nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;2.2W/RDS(on);95mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);32pF/Current - Continuous Drain(Id);3A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;637pF/Output Capacitance(Coss);39pF


    60V 3A 2.2W Surface Mount SOT-223

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