TECH PUBLIC-Single FETs, MOSFETs-PMGD175XNEX-TP

Description

Drain to Source Voltage;30V/Gate Charge(Qg);2.6nC@4.5V/Number;2 N-Channel/Pd - Power Dissipation;350mW/RDS(on);350mΩ@4.5V;450mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);7.4pF/Current - Continuous Drain(Id);800mA/Gate Threshold Voltage (Vgs(th));800mV/Ciss-Input Capacitance;72.9pF/Output Capacitance(Coss);18.3pF


30V 800mA Surface Mount SOT-363

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);2.6nC@4.5V/Number;2 N-Channel/Pd - Power Dissipation;350mW/RDS(on);350mΩ@4.5V;450mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);7.4pF/Current - Continuous Drain(Id);800mA/Gate Threshold Voltage (Vgs(th));800mV/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);2.6nC@4.5V/Number;2 N-Channel/Pd - Power Dissipation;350mW/RDS(on);350mΩ@4.5V;450mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);7.4pF/Current - Continuous Drain(Id);800mA/Gate Threshold Voltage (Vgs(th));800mV/Ciss-Input Capacitance;72.9pF/Output Capacitance(Coss);18.3pF


    30V 800mA Surface Mount SOT-363

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