TECH PUBLIC-Single FETs, MOSFETs-SI2306BDS

Description

Drain to Source Voltage;30V/Gate Charge(Qg);10nC@15V/Number;1 N-channel/Pd - Power Dissipation;900mW/RDS(on);95mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);18pF/Current - Continuous Drain(Id);3A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;235pF


30V 3A 0.9W Surface Mount SOT-23

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Drain to Source Voltage;30V/Gate Charge(Qg);10nC@15V/Number;1 N-channel/Pd - Power Dissipation;900mW/RDS(on);95mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);18pF/Current - Continuous Drain(Id);3A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);10nC@15V/Number;1 N-channel/Pd - Power Dissipation;900mW/RDS(on);95mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);18pF/Current - Continuous Drain(Id);3A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;235pF


    30V 3A 0.9W Surface Mount SOT-23

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