TECH PUBLIC-Single FETs, MOSFETs-SI2323CDS

Description

Drain to Source Voltage;20V/Gate Charge(Qg);19.5nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;1.8W/RDS(on);28mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);210pF/Current - Continuous Drain(Id);6A/Gate Threshold Voltage (Vgs(th));400mV/Ciss-Input Capacitance;1.73nF


20V 6A 1.8W Surface Mount SOT-23-3

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);19.5nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;1.8W/RDS(on);28mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);210pF/Current - Continuous Drain(Id);6A/Gate Threshold Voltage (Vgs(th));400mV/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);19.5nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;1.8W/RDS(on);28mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);210pF/Current - Continuous Drain(Id);6A/Gate Threshold Voltage (Vgs(th));400mV/Ciss-Input Capacitance;1.73nF


    20V 6A 1.8W Surface Mount SOT-23-3

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