TECH PUBLIC-Single FETs, MOSFETs-TPM2001NY3

Description

Drain to Source Voltage;200V/Gate Charge(Qg);3.2nC@5V/Number;1 N-channel/Pd - Power Dissipation;2.1W/RDS(on);1.35Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);11.3pF/Current - Continuous Drain(Id);1A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;148pF


200V 1A 2.1W Surface Mount SOT-223

Product form

Drain to Source Voltage;200V/Gate Charge(Qg);3.2nC@5V/Number;1 N-channel/Pd - Power Dissipation;2.1W/RDS(on);1.35Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);11.3pF/Current - Continuous Drain(Id);1A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input... Read more

$1.77 Excl. VAT

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    Description

    Drain to Source Voltage;200V/Gate Charge(Qg);3.2nC@5V/Number;1 N-channel/Pd - Power Dissipation;2.1W/RDS(on);1.35Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);11.3pF/Current - Continuous Drain(Id);1A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;148pF


    200V 1A 2.1W Surface Mount SOT-223

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