TECH PUBLIC-Single FETs, MOSFETs-TPM2008EP3

Description

Drain to Source Voltage;20V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;100mW/RDS(on);130mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);15pF/Current - Continuous Drain(Id);700mA/Gate Threshold Voltage (Vgs(th));750mV/Ciss-Input Capacitance;120pF


N-Channel 20V 700mA 100mW Surface Mount DFN1006-3L

Product form

Drain to Source Voltage;20V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;100mW/RDS(on);130mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);15pF/Current - Continuous Drain(Id);700mA/Gate Threshold Voltage (Vgs(th));750mV/Ciss-Input Capacitance;120pFN-Channel... Read more

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    Description

    Drain to Source Voltage;20V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;100mW/RDS(on);130mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);15pF/Current - Continuous Drain(Id);700mA/Gate Threshold Voltage (Vgs(th));750mV/Ciss-Input Capacitance;120pF


    N-Channel 20V 700mA 100mW Surface Mount DFN1006-3L

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