TECH PUBLIC-Single FETs, MOSFETs-TPM2008EP3-A

Description

Drain to Source Voltage;20V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;100mW/RDS(on);370mΩ@25V/Reverse Transfer Capacitance (Crss@Vds);15pF/Current - Continuous Drain(Id);700mA/Gate Threshold Voltage (Vgs(th));1.1V/Ciss-Input Capacitance;120pF/Output Capacitance(Coss);20pF


N-Channel 20V 0.7A 100mW Surface Mount DFN1006-3L

Product form

Drain to Source Voltage;20V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;100mW/RDS(on);370mΩ@25V/Reverse Transfer Capacitance (Crss@Vds);15pF/Current - Continuous Drain(Id);700mA/Gate Threshold Voltage (Vgs(th));1.1V/Ciss-Input Capacitance;120pF/Output Capacitance(Coss);20pFN-Channel 20V... Read more

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    Description

    Drain to Source Voltage;20V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;100mW/RDS(on);370mΩ@25V/Reverse Transfer Capacitance (Crss@Vds);15pF/Current - Continuous Drain(Id);700mA/Gate Threshold Voltage (Vgs(th));1.1V/Ciss-Input Capacitance;120pF/Output Capacitance(Coss);20pF


    N-Channel 20V 0.7A 100mW Surface Mount DFN1006-3L

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