TECH PUBLIC-Single FETs, MOSFETs-TPM2102NLC3

Description

Drain to Source Voltage;20V/Gate Charge(Qg);10nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;200mW/RDS(on);75mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);80pF/Current - Continuous Drain(Id);2.1A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;300pF


20V 2.1A 0.2W Surface Mount SOT-323

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Drain to Source Voltage;20V/Gate Charge(Qg);10nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;200mW/RDS(on);75mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);80pF/Current - Continuous Drain(Id);2.1A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);10nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;200mW/RDS(on);75mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);80pF/Current - Continuous Drain(Id);2.1A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;300pF


    20V 2.1A 0.2W Surface Mount SOT-323

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