TECH PUBLIC-Single FETs, MOSFETs-TPM3090NK3-3

Description

Drain to Source Voltage;30V/Gate Charge(Qg);103nC@10V/Number;1 N-channel/Pd - Power Dissipation;181W/RDS(on);3.88mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);352pF/Current - Continuous Drain(Id);90A/Gate Threshold Voltage (Vgs(th));1.4V/Ciss-Input Capacitance;5.672nF/Output Capacitance(Coss);392pF


30V 3.88mΩ@10V 1 N-channel 181W TO-252 Single FETs, MOSFETs RoHS

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Drain to Source Voltage;30V/Gate Charge(Qg);103nC@10V/Number;1 N-channel/Pd - Power Dissipation;181W/RDS(on);3.88mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);352pF/Current - Continuous Drain(Id);90A/Gate Threshold Voltage (Vgs(th));1.4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);103nC@10V/Number;1 N-channel/Pd - Power Dissipation;181W/RDS(on);3.88mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);352pF/Current - Continuous Drain(Id);90A/Gate Threshold Voltage (Vgs(th));1.4V/Ciss-Input Capacitance;5.672nF/Output Capacitance(Coss);392pF


    30V 3.88mΩ@10V 1 N-channel 181W TO-252 Single FETs, MOSFETs RoHS

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