TECH PUBLIC-Single FETs, MOSFETs-TPM30NB10S8-1

Description

Drain to Source Voltage;30V/Gate Charge(Qg);9.5nC/Number;2 N-Channel/Pd - Power Dissipation;1.2W/RDS(on);16mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);71pF/Current - Continuous Drain(Id);8.3A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;841pF


N-Channel Array 30V 8.3A 1.2W Surface Mount SOP-8

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);9.5nC/Number;2 N-Channel/Pd - Power Dissipation;1.2W/RDS(on);16mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);71pF/Current - Continuous Drain(Id);8.3A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);9.5nC/Number;2 N-Channel/Pd - Power Dissipation;1.2W/RDS(on);16mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);71pF/Current - Continuous Drain(Id);8.3A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;841pF


    N-Channel Array 30V 8.3A 1.2W Surface Mount SOP-8

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