TECH PUBLIC-Single FETs, MOSFETs-TPM60V4PS8-1

Description

Drain to Source Voltage;60V/Gate Charge(Qg);24nC/Number;1 P-Channel/Pd - Power Dissipation;3.1W/RDS(on);145mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);30pF/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;976pF


60V 4A 3.1W Surface Mount SOIC-8

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);24nC/Number;1 P-Channel/Pd - Power Dissipation;3.1W/RDS(on);145mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);30pF/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);24nC/Number;1 P-Channel/Pd - Power Dissipation;3.1W/RDS(on);145mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);30pF/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;976pF


    60V 4A 3.1W Surface Mount SOIC-8

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