TECH PUBLIC-Single FETs, MOSFETs-TPM6321S6

Description

Drain to Source Voltage;25V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/RDS(on);950mΩ@1.8V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);15pF/Current - Continuous Drain(Id);800mA/Gate Threshold Voltage (Vgs(th));450mV/Ciss-Input Capacitance;170pF/Output Capacitance(Coss);20pF;25pF


N-Channel+P-Channel Array 25V 0.8A Surface Mount SOT-23-6

Product form

Drain to Source Voltage;25V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/RDS(on);950mΩ@1.8V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);15pF/Current - Continuous Drain(Id);800mA/Gate Threshold Voltage... Read more

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    Description

    Drain to Source Voltage;25V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/RDS(on);950mΩ@1.8V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);15pF/Current - Continuous Drain(Id);800mA/Gate Threshold Voltage (Vgs(th));450mV/Ciss-Input Capacitance;170pF/Output Capacitance(Coss);20pF;25pF


    N-Channel+P-Channel Array 25V 0.8A Surface Mount SOT-23-6

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