TECH PUBLIC-Single FETs, MOSFETs-TPNTJD4105CT1G

Description

Drain to Source Voltage;20V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/RDS(on);950mΩ@1.8V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);15pF/Current - Continuous Drain(Id);900mA/Gate Threshold Voltage (Vgs(th));1.3V/Ciss-Input Capacitance;120pF/Output Capacitance(Coss);20pF


N-Channel+P-Channel Array 20V 0.9A Surface Mount SOT-363

Product form

Drain to Source Voltage;20V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/RDS(on);950mΩ@1.8V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);15pF/Current - Continuous Drain(Id);900mA/Gate Threshold Voltage... Read more

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    Description

    Drain to Source Voltage;20V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/RDS(on);950mΩ@1.8V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);15pF/Current - Continuous Drain(Id);900mA/Gate Threshold Voltage (Vgs(th));1.3V/Ciss-Input Capacitance;120pF/Output Capacitance(Coss);20pF


    N-Channel+P-Channel Array 20V 0.9A Surface Mount SOT-363

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