TECH PUBLIC-Single, Pre-Biased Bipolar Transistors-TPDTC114EUA

Description

/Collector - Emitter Voltage VCEO;50V/Current - Collector(Ic);100mA/Pd - Power Dissipation;200mW/Operating Temperature;-55℃~+150℃/Input Resistor;13kΩ/Resistor Ratio;1.2/DC Current Gain;30


Pre-Biased Bipolar Transistor (BJT) 50V 100mA 200mW Surface Mount SOT-323

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/Collector - Emitter Voltage VCEO;50V/Current - Collector(Ic);100mA/Pd - Power Dissipation;200mW/Operating Temperature;-55℃~+150℃/Input Resistor;13kΩ/Resistor Ratio;1.2/DC Current Gain;30Pre-Biased Bipolar Transistor (BJT) 50V 100mA... Read more

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    Description

    /Collector - Emitter Voltage VCEO;50V/Current - Collector(Ic);100mA/Pd - Power Dissipation;200mW/Operating Temperature;-55℃~+150℃/Input Resistor;13kΩ/Resistor Ratio;1.2/DC Current Gain;30


    Pre-Biased Bipolar Transistor (BJT) 50V 100mA 200mW Surface Mount SOT-323

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