Techcode-Single FETs, MOSFETs-TDM3744

Description

Drain to Source Voltage;80V/Gate Charge(Qg);74nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;272W/RDS(on);3.9mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);91pF/Current - Continuous Drain(Id);196A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;3.635nF/Output Capacitance(Coss);1.317nF


80V 3.9mΩ@10V 1 N-channel 272W TO-220 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;80V/Gate Charge(Qg);74nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;272W/RDS(on);3.9mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);91pF/Current - Continuous Drain(Id);196A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;80V/Gate Charge(Qg);74nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;272W/RDS(on);3.9mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);91pF/Current - Continuous Drain(Id);196A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;3.635nF/Output Capacitance(Coss);1.317nF


    80V 3.9mΩ@10V 1 N-channel 272W TO-220 Single FETs, MOSFETs RoHS

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