Tokmas-Single FETs, MOSFETs-CI100P04

Description

Drain to Source Voltage;40V/Gate Charge(Qg);117nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;107W/RDS(on);5.6mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);344pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;6.637nF/Output Capacitance(Coss);544pF


P-Channel 40V 100A 107W Surface Mount TO-252

Product form

Drain to Source Voltage;40V/Gate Charge(Qg);117nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;107W/RDS(on);5.6mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);344pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);117nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;107W/RDS(on);5.6mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);344pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;6.637nF/Output Capacitance(Coss);544pF


    P-Channel 40V 100A 107W Surface Mount TO-252

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