Tokmas-Single FETs, MOSFETs-CID10N65E3

Description

Drain to Source Voltage;650V/Gate Charge(Qg);2.3nC/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;75W/RDS(on);160mΩ/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);0.4pF/Current - Continuous Drain(Id);10A/Gate Threshold Voltage (Vgs(th));1.6V/Ciss-Input Capacitance;83pF/Output Capacitance(Coss);27pF


650V 160mΩ 1 N-channel 75W TO-252 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);2.3nC/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;75W/RDS(on);160mΩ/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);0.4pF/Current - Continuous Drain(Id);10A/Gate Threshold Voltage (Vgs(th));1.6V/Ciss-Input... Read more

$2.28 Excl. VAT

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);2.3nC/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;75W/RDS(on);160mΩ/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);0.4pF/Current - Continuous Drain(Id);10A/Gate Threshold Voltage (Vgs(th));1.6V/Ciss-Input Capacitance;83pF/Output Capacitance(Coss);27pF


    650V 160mΩ 1 N-channel 75W TO-252 Single FETs, MOSFETs RoHS

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