Tokmas-Single FETs, MOSFETs-FQD5P20TM

Description

Drain to Source Voltage;200V/Gate Charge(Qg);18nC@100V/Number;1 P-Channel/Pd - Power Dissipation;35W/RDS(on);1.5Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);30pF/Current - Continuous Drain(Id);5A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;480pF


200V 1.5Ω@10V 1 P-Channel 35W TO-252 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;200V/Gate Charge(Qg);18nC@100V/Number;1 P-Channel/Pd - Power Dissipation;35W/RDS(on);1.5Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);30pF/Current - Continuous Drain(Id);5A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;200V/Gate Charge(Qg);18nC@100V/Number;1 P-Channel/Pd - Power Dissipation;35W/RDS(on);1.5Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);30pF/Current - Continuous Drain(Id);5A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;480pF


    200V 1.5Ω@10V 1 P-Channel 35W TO-252 Single FETs, MOSFETs RoHS

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