Tritech-MOS-Single FETs, MOSFETs-TM50N06YS

Description

Drain to Source Voltage;60V/Gate Charge(Qg);36nC/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;87.7W/RDS(on);16mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);80pF/Current - Continuous Drain(Id);50A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.798nF/Output Capacitance(Coss);185pF


N-Channel 60V Through Hole TO-251S-3L

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);36nC/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;87.7W/RDS(on);16mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);80pF/Current - Continuous Drain(Id);50A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);36nC/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;87.7W/RDS(on);16mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);80pF/Current - Continuous Drain(Id);50A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.798nF/Output Capacitance(Coss);185pF


    N-Channel 60V Through Hole TO-251S-3L

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