Tritech-MOS-Single FETs, MOSFETs-TMGN10060P

Description

Drain to Source Voltage;100V/Gate Charge(Qg);16.2nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;96W/RDS(on);13.8mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);9.5pF/Current - Continuous Drain(Id);60A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1nF/Output Capacitance(Coss);180pF


100V Through Hole TO-220AB

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);16.2nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;96W/RDS(on);13.8mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);9.5pF/Current - Continuous Drain(Id);60A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1nF/Output Capacitance(Coss);180pF100V... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);16.2nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;96W/RDS(on);13.8mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);9.5pF/Current - Continuous Drain(Id);60A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1nF/Output Capacitance(Coss);180pF


    100V Through Hole TO-220AB

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