UNI-SEMIC-Single FETs, MOSFETs-APG250N01

Description

Drain to Source Voltage;100V/Gate Charge(Qg);22.7nC@50V/Number;1 N-channel/Pd - Power Dissipation;45W/RDS(on);38mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);23.5pF/Current - Continuous Drain(Id);40A/Gate Threshold Voltage (Vgs(th));2.8V/Ciss-Input Capacitance;822pF/Output Capacitance(Coss);310pF


N-Channel 100V 40A 45W Through Hole TO-220

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);22.7nC@50V/Number;1 N-channel/Pd - Power Dissipation;45W/RDS(on);38mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);23.5pF/Current - Continuous Drain(Id);40A/Gate Threshold Voltage (Vgs(th));2.8V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);22.7nC@50V/Number;1 N-channel/Pd - Power Dissipation;45W/RDS(on);38mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);23.5pF/Current - Continuous Drain(Id);40A/Gate Threshold Voltage (Vgs(th));2.8V/Ciss-Input Capacitance;822pF/Output Capacitance(Coss);310pF


    N-Channel 100V 40A 45W Through Hole TO-220

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