VBsemi Elec-Single FETs, MOSFETs-2SJ280S-VB

Description

Drain to Source Voltage;60V/Gate Charge(Qg);76nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;3.1W/RDS(on);19mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);290pF/Current - Continuous Drain(Id);9.2A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;3.5nF


P-Channel 60V 9.2A 3.1W Surface Mount TO-263(D2PAK)

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);76nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;3.1W/RDS(on);19mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);290pF/Current - Continuous Drain(Id);9.2A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input... Read more

$3.24 Excl. VAT

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);76nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;3.1W/RDS(on);19mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);290pF/Current - Continuous Drain(Id);9.2A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;3.5nF


    P-Channel 60V 9.2A 3.1W Surface Mount TO-263(D2PAK)

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