VBsemi Elec-Single FETs, MOSFETs-2SJ355-VB

Description

Drain to Source Voltage;30V/Gate Charge(Qg);25nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;6.5W/RDS(on);50mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);145pF/Current - Continuous Drain(Id);7.6A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.395nF/Output Capacitance(Coss);180pF


P-Channel 30V 7.6A 6.5W Surface Mount SOT-89

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);25nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;6.5W/RDS(on);50mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);145pF/Current - Continuous Drain(Id);7.6A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

$3.78 Excl. VAT

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);25nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;6.5W/RDS(on);50mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);145pF/Current - Continuous Drain(Id);7.6A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.395nF/Output Capacitance(Coss);180pF


    P-Channel 30V 7.6A 6.5W Surface Mount SOT-89

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