VBsemi Elec-Single FETs, MOSFETs-2SK2013-VB

Description

Drain to Source Voltage;200V/Gate Charge(Qg);70nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;42W/RDS(on);58mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);130pF/Current - Continuous Drain(Id);20A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.3nF/Output Capacitance(Coss);430pF


N-Channel 200V 20A 42W Through Hole TO-220F

Product form

Drain to Source Voltage;200V/Gate Charge(Qg);70nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;42W/RDS(on);58mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);130pF/Current - Continuous Drain(Id);20A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;200V/Gate Charge(Qg);70nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;42W/RDS(on);58mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);130pF/Current - Continuous Drain(Id);20A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.3nF/Output Capacitance(Coss);430pF


    N-Channel 200V 20A 42W Through Hole TO-220F

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