VBsemi Elec-Single FETs, MOSFETs-2SK3115-VB

Description

Drain to Source Voltage;650V/Gate Charge(Qg);43nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;106W/RDS(on);840mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);10A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;230pF/Output Capacitance(Coss);100pF


N-Channel 650V 10A 106W Through Hole TO-220AB

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);43nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;106W/RDS(on);840mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);10A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;230pF/Output Capacitance(Coss);100pFN-Channel 650V... Read more

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);43nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;106W/RDS(on);840mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);10A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;230pF/Output Capacitance(Coss);100pF


    N-Channel 650V 10A 106W Through Hole TO-220AB

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