VBsemi Elec-Single FETs, MOSFETs-2SK971-VB

Description

Drain to Source Voltage;60V/Gate Charge(Qg);66nC@5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;150W/RDS(on);28mΩ@4.5V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);170pF/Current - Continuous Drain(Id);50A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;190pF/Output Capacitance(Coss);920pF


N-Channel 60V 50A 150W Through Hole TO-220AB

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);66nC@5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;150W/RDS(on);28mΩ@4.5V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);170pF/Current - Continuous Drain(Id);50A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);66nC@5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;150W/RDS(on);28mΩ@4.5V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);170pF/Current - Continuous Drain(Id);50A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;190pF/Output Capacitance(Coss);920pF


    N-Channel 60V 50A 150W Through Hole TO-220AB

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