VBsemi Elec-Single FETs, MOSFETs-3N06-VB

Description

Drain to Source Voltage;60V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.66W/RDS(on);86mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);13pF/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;180pF/Output Capacitance(Coss);22pF


N-Channel 60V 4A 1.66W Surface Mount SOT-23(TO-236)

Product form

Drain to Source Voltage;60V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.66W/RDS(on);86mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);13pF/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;180pF/Output... Read more

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    Description

    Drain to Source Voltage;60V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.66W/RDS(on);86mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);13pF/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;180pF/Output Capacitance(Coss);22pF


    N-Channel 60V 4A 1.66W Surface Mount SOT-23(TO-236)

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