VBsemi Elec-Single FETs, MOSFETs-4501SS-VB

Description

Drain to Source Voltage;30V/Gate Charge(Qg);6.2nC@10V;18.5nC@10V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;2W/RDS(on);18mΩ@10V;40mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);33pF;57pF/Current - Continuous Drain(Id);8A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;510pF;620pF/Output Capacitance(Coss);95pF;115pF


N-Channel+P-Channel 30V 8A 2W Surface Mount SO-8

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);6.2nC@10V;18.5nC@10V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;2W/RDS(on);18mΩ@10V;40mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);33pF;57pF/Current -... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);6.2nC@10V;18.5nC@10V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;2W/RDS(on);18mΩ@10V;40mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);33pF;57pF/Current - Continuous Drain(Id);8A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;510pF;620pF/Output Capacitance(Coss);95pF;115pF


    N-Channel+P-Channel 30V 8A 2W Surface Mount SO-8

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