VBsemi Elec-Single FETs, MOSFETs-4P0304-VB

Description

Drain to Source Voltage;30V/Gate Charge(Qg);240nC@10V/Number;1 P-Channel/Type;P-Channel/RDS(on);7mΩ@4.5V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);715pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;8nF/Output Capacitance(Coss);1.565nF


P-Channel 30V 100A Surface Mount TO-252

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);240nC@10V/Number;1 P-Channel/Type;P-Channel/RDS(on);7mΩ@4.5V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);715pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;8nF/Output Capacitance(Coss);1.565nFP-Channel 30V... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);240nC@10V/Number;1 P-Channel/Type;P-Channel/RDS(on);7mΩ@4.5V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);715pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;8nF/Output Capacitance(Coss);1.565nF


    P-Channel 30V 100A Surface Mount TO-252

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