VBsemi Elec-Single FETs, MOSFETs-AOT13N50-VB

Description

Drain to Source Voltage;650V/Gate Charge(Qg);71nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;228W/RDS(on);340mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);210pF/Current - Continuous Drain(Id);18A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;4.826nF/Output Capacitance(Coss);456pF


N-Channel 650V 18A 228W Through Hole TO-220AB

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);71nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;228W/RDS(on);340mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);210pF/Current - Continuous Drain(Id);18A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);71nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;228W/RDS(on);340mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);210pF/Current - Continuous Drain(Id);18A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;4.826nF/Output Capacitance(Coss);456pF


    N-Channel 650V 18A 228W Through Hole TO-220AB

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