VBsemi Elec-Single FETs, MOSFETs-AOT430-VB

Description

Drain to Source Voltage;80V/Gate Charge(Qg);35.5nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;180W/RDS(on);7mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);376pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;3.855nF/Output Capacitance(Coss);1.12nF


N-Channel 80V 100A 180W Through Hole TO-220AB

Product form

Drain to Source Voltage;80V/Gate Charge(Qg);35.5nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;180W/RDS(on);7mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);376pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input... Read more

$2.94 Excl. VAT

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    Description

    Drain to Source Voltage;80V/Gate Charge(Qg);35.5nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;180W/RDS(on);7mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);376pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;3.855nF/Output Capacitance(Coss);1.12nF


    N-Channel 80V 100A 180W Through Hole TO-220AB

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