VBsemi Elec-Single FETs, MOSFETs-AP18P10GM-HF-VB

Description

Drain to Source Voltage;100V/Gate Charge(Qg);42nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;5.9W/RDS(on);200mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);42pF/Current - Continuous Drain(Id);2.5A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;1.19nF/Output Capacitance(Coss);61pF


P-Channel 100V 2.5A 5.9W Surface Mount SO-8

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);42nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;5.9W/RDS(on);200mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);42pF/Current - Continuous Drain(Id);2.5A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);42nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;5.9W/RDS(on);200mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);42pF/Current - Continuous Drain(Id);2.5A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;1.19nF/Output Capacitance(Coss);61pF


    P-Channel 100V 2.5A 5.9W Surface Mount SO-8

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