VBsemi Elec-Single FETs, MOSFETs-BSC080P03LS G-VB

Description

Drain to Source Voltage;30V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;110W/RDS(on);6mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);120A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;7.05nF/Output Capacitance(Coss);1.375nF


P-Channel 30V 120A 110W Surface Mount DFN5x6-8

Product form

Drain to Source Voltage;30V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;110W/RDS(on);6mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);120A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;7.05nF/Output Capacitance(Coss);1.375nFP-Channel 30V 120A... Read more

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    Description

    Drain to Source Voltage;30V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;110W/RDS(on);6mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);120A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;7.05nF/Output Capacitance(Coss);1.375nF


    P-Channel 30V 120A 110W Surface Mount DFN5x6-8

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