VBsemi Elec-Single FETs, MOSFETs-BSO4804HUMA2-VB

Description

Drain to Source Voltage;30V/Gate Charge(Qg);14.5nC@10V;7.1nC@4.5V/Number;2 N-Channel/Type;N-Channel/Pd - Power Dissipation;3.1W/RDS(on);16mΩ@10V;20mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);86pF/Current - Continuous Drain(Id);8.5A/Gate Threshold Voltage (Vgs(th));1.2V;2.5V/Ciss-Input Capacitance;660pF/Output Capacitance(Coss);140pF


30V 2 N-Channel 3.1W SO-8 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);14.5nC@10V;7.1nC@4.5V/Number;2 N-Channel/Type;N-Channel/Pd - Power Dissipation;3.1W/RDS(on);16mΩ@10V;20mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);86pF/Current - Continuous Drain(Id);8.5A/Gate Threshold Voltage (Vgs(th));1.2V;2.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);14.5nC@10V;7.1nC@4.5V/Number;2 N-Channel/Type;N-Channel/Pd - Power Dissipation;3.1W/RDS(on);16mΩ@10V;20mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);86pF/Current - Continuous Drain(Id);8.5A/Gate Threshold Voltage (Vgs(th));1.2V;2.5V/Ciss-Input Capacitance;660pF/Output Capacitance(Coss);140pF


    30V 2 N-Channel 3.1W SO-8 Single FETs, MOSFETs RoHS

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