VBsemi Elec-Single FETs, MOSFETs-BSP89-VB

Description

Drain to Source Voltage;250V/Gate Charge(Qg);8.2nC/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;3.1W/RDS(on);2Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);9.6pF/Current - Continuous Drain(Id);790mA/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;140pF/Output Capacitance(Coss);42pF


N-Channel 250V 0.79A 3.1W Surface Mount SOT-223

Product form

Drain to Source Voltage;250V/Gate Charge(Qg);8.2nC/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;3.1W/RDS(on);2Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);9.6pF/Current - Continuous Drain(Id);790mA/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

$1.53 Excl. VAT

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    Description

    Drain to Source Voltage;250V/Gate Charge(Qg);8.2nC/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;3.1W/RDS(on);2Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);9.6pF/Current - Continuous Drain(Id);790mA/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;140pF/Output Capacitance(Coss);42pF


    N-Channel 250V 0.79A 3.1W Surface Mount SOT-223

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