VBsemi Elec-Single FETs, MOSFETs-BSS308PEH6327-VB

Description

Drain to Source Voltage;30V/Gate Charge(Qg);36nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;2.5W/RDS(on);54mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);130pF/Current - Continuous Drain(Id);5.6A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;1.295nF/Output Capacitance(Coss);150pF


P-Channel 30V 5.6A 2.5W Surface Mount SOT-23

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);36nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;2.5W/RDS(on);54mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);130pF/Current - Continuous Drain(Id);5.6A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);36nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;2.5W/RDS(on);54mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);130pF/Current - Continuous Drain(Id);5.6A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;1.295nF/Output Capacitance(Coss);150pF


    P-Channel 30V 5.6A 2.5W Surface Mount SOT-23

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