VBsemi Elec-Single FETs, MOSFETs-BUK9515-100A-VB

Description

Drain to Source Voltage;100V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;3.75W/RDS(on);20mΩ@4.5V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);265pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;4.7nF/Output Capacitance(Coss);665pF


N-Channel 100V 100A 3.75W Through Hole TO-220AB

Product form

Drain to Source Voltage;100V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;3.75W/RDS(on);20mΩ@4.5V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);265pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;4.7nF/Output... Read more

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    Description

    Drain to Source Voltage;100V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;3.75W/RDS(on);20mΩ@4.5V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);265pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;4.7nF/Output Capacitance(Coss);665pF


    N-Channel 100V 100A 3.75W Through Hole TO-220AB

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