VBsemi Elec-Single FETs, MOSFETs-BUK9520-100B-VB

Description

Drain to Source Voltage;100V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;3.35W/RDS(on);17mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);110pF/Current - Continuous Drain(Id);70A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.8nF/Output Capacitance(Coss);210pF


N-Channel 100V 70A 3.35W Through Hole TO-220AB

Product form

Drain to Source Voltage;100V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;3.35W/RDS(on);17mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);110pF/Current - Continuous Drain(Id);70A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.8nF/Output... Read more

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    Description

    Drain to Source Voltage;100V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;3.35W/RDS(on);17mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);110pF/Current - Continuous Drain(Id);70A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.8nF/Output Capacitance(Coss);210pF


    N-Channel 100V 70A 3.35W Through Hole TO-220AB

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