VBsemi Elec-Single FETs, MOSFETs-CEH2288-VB

Description

Drain to Source Voltage;20V/Gate Charge(Qg);18nC@4.5V/Number;2 N-Channel/Type;N-Channel/Pd - Power Dissipation;960mW/RDS(on);28mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);6A/Gate Threshold Voltage (Vgs(th));1.5V


N-Channel Array 20V 6A 0.96W Surface Mount TSOP-6

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);18nC@4.5V/Number;2 N-Channel/Type;N-Channel/Pd - Power Dissipation;960mW/RDS(on);28mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);6A/Gate Threshold Voltage (Vgs(th));1.5VN-Channel Array 20V 6A... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);18nC@4.5V/Number;2 N-Channel/Type;N-Channel/Pd - Power Dissipation;960mW/RDS(on);28mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);6A/Gate Threshold Voltage (Vgs(th));1.5V


    N-Channel Array 20V 6A 0.96W Surface Mount TSOP-6

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