VBsemi Elec-Single FETs, MOSFETs-DMNH4015SSD-13-VB

Description

Drain to Source Voltage;40V/Gate Charge(Qg);15nC@10V;5.9nC@5V/Number;2 N-Channel/Type;N-Channel/Pd - Power Dissipation;4.1W/RDS(on);10mΩ@10V;15mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);73pF/Current - Continuous Drain(Id);12A/Gate Threshold Voltage (Vgs(th));1.2V;2.5V/Ciss-Input Capacitance;641pF/Output Capacitance(Coss);175pF


40V 2 N-Channel 4.1W SO-8 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;40V/Gate Charge(Qg);15nC@10V;5.9nC@5V/Number;2 N-Channel/Type;N-Channel/Pd - Power Dissipation;4.1W/RDS(on);10mΩ@10V;15mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);73pF/Current - Continuous Drain(Id);12A/Gate Threshold Voltage (Vgs(th));1.2V;2.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);15nC@10V;5.9nC@5V/Number;2 N-Channel/Type;N-Channel/Pd - Power Dissipation;4.1W/RDS(on);10mΩ@10V;15mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);73pF/Current - Continuous Drain(Id);12A/Gate Threshold Voltage (Vgs(th));1.2V;2.5V/Ciss-Input Capacitance;641pF/Output Capacitance(Coss);175pF


    40V 2 N-Channel 4.1W SO-8 Single FETs, MOSFETs RoHS

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