VBsemi Elec-Single FETs, MOSFETs-E5P02-VB

Description

Drain to Source Voltage;20V/Gate Charge(Qg);50nC@8V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;19W/RDS(on);15mΩ@4.5V;21mΩ@2.5V;40mΩ@1.8V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);13A/Gate Threshold Voltage (Vgs(th));1.2V


P-Channel 20V 13A 19W Surface Mount SO-8

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);50nC@8V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;19W/RDS(on);15mΩ@4.5V;21mΩ@2.5V;40mΩ@1.8V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);13A/Gate Threshold Voltage (Vgs(th));1.2VP-Channel 20V 13A 19W... Read more

$4.56 Excl. VAT

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);50nC@8V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;19W/RDS(on);15mΩ@4.5V;21mΩ@2.5V;40mΩ@1.8V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);13A/Gate Threshold Voltage (Vgs(th));1.2V


    P-Channel 20V 13A 19W Surface Mount SO-8

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