VBsemi Elec-Single FETs, MOSFETs-E6P02-VB

Description

Drain to Source Voltage;20V/Gate Charge(Qg);34.5nC@4.5V/Number;2 P-Channel/Type;P-Channel/Pd - Power Dissipation;2W/RDS(on);18mΩ@4.5V;22mΩ@2.5V;30mΩ@1.8V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);8.9A/Gate Threshold Voltage (Vgs(th));1V


P-Channel 20V 8.9A 2W Surface Mount SO-8

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);34.5nC@4.5V/Number;2 P-Channel/Type;P-Channel/Pd - Power Dissipation;2W/RDS(on);18mΩ@4.5V;22mΩ@2.5V;30mΩ@1.8V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);8.9A/Gate Threshold Voltage (Vgs(th));1VP-Channel 20V 8.9A 2W... Read more

$1.56 Excl. VAT

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);34.5nC@4.5V/Number;2 P-Channel/Type;P-Channel/Pd - Power Dissipation;2W/RDS(on);18mΩ@4.5V;22mΩ@2.5V;30mΩ@1.8V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);8.9A/Gate Threshold Voltage (Vgs(th));1V


    P-Channel 20V 8.9A 2W Surface Mount SO-8

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